Features: · Access time : 55, 70 ns· High-density design : 4Mbit Design· Battery internally isolated until power is applied· Industry-standard 34-pin 128K x 8 pinout· Unlimited write cycles· Data retention in the absence of VCC· 10-years minimum data retention in absence of power· Automatic write-...
HMN1288J: Features: · Access time : 55, 70 ns· High-density design : 4Mbit Design· Battery internally isolated until power is applied· Industry-standard 34-pin 128K x 8 pinout· Unlimited write cycles· Data re...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER |
SYMBOL |
RATING |
CONDITIONS |
DC voltage applied on VCC relative to VSS |
VCC |
-0.3V to 7.0V |
|
DC Voltage applied on any pin excluding VCC relative to VSS |
VT |
-0.3V to Vcc+0.3 |
VT VCC+0.3 |
Operating temperature |
TOPR |
0 to 70°C |
|
Storage temperature |
TSTG |
-55°C to 125°C |
|
Soldering temperature |
TSOLDER |
260°C |
For 10 second |
The HMN1288J Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.
The HMN1288J has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.
The HMN1288J uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.