HMN1288J

Features: · Access time : 55, 70 ns· High-density design : 4Mbit Design· Battery internally isolated until power is applied· Industry-standard 34-pin 128K x 8 pinout· Unlimited write cycles· Data retention in the absence of VCC· 10-years minimum data retention in absence of power· Automatic write-...

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HMN1288J Picture
SeekIC No. : 004364732 Detail

HMN1288J: Features: · Access time : 55, 70 ns· High-density design : 4Mbit Design· Battery internally isolated until power is applied· Industry-standard 34-pin 128K x 8 pinout· Unlimited write cycles· Data re...

floor Price/Ceiling Price

Part Number:
HMN1288J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Access time : 55, 70 ns
· High-density design : 4Mbit Design
· Battery internally isolated until power is applied
· Industry-standard 34-pin 128K x 8 pinout
· Unlimited write cycles
· Data retention in the absence of VCC
· 10-years minimum data retention in absence of power
· Automatic write-protection during power-up/power-down cycles
· Data is automatically protected during power loss
· Conventional SRAM operation; unlimited write cycles



Pinout

  Connection Diagram


Specifications

PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on VCC relative to VSS
VCC
-0.3V to 7.0V
DC Voltage applied on any pin excluding VCC
relative to VSS
VT
-0.3V to Vcc+0.3
VT VCC+0.3
Operating temperature
TOPR
0 to 70°C
Storage temperature
TSTG
-55°C to 125°C
Soldering temperature
TSOLDER
260°C
For 10 second



Description

The HMN1288J Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.

The HMN1288J has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.

The HMN1288J uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.




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