HMMC-5620

Features: • Wide-Frequency Range:6 20 GHz• High Gain: 17 dB• Gain Flatness: ± 1.0 dB• Return Loss: Input -15 dB Output -15 dB• Single Bias Supply Operation• Low DC Power Dissipation: PDC ~ 0.5 Watts• Medium Power: 20 GHz: P-1dB: 12 dBm Psat: 13 dBmApplicat...

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SeekIC No. : 004364728 Detail

HMMC-5620: Features: • Wide-Frequency Range:6 20 GHz• High Gain: 17 dB• Gain Flatness: ± 1.0 dB• Return Loss: Input -15 dB Output -15 dB• Single Bias Supply Operation• Low D...

floor Price/Ceiling Price

Part Number:
HMMC-5620
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• Wide-Frequency Range:6 20 GHz
• High Gain: 17 dB
• Gain Flatness: ± 1.0 dB
• Return Loss:
    Input -15 dB
    Output -15 dB
• Single Bias Supply Operation
• Low DC Power Dissipation: PDC ~ 0.5 Watts
• Medium Power:
    20 GHz: P-1dB: 12 dBm
                  Psat: 13 dBm



Application

The HMMC-5620 amplifier is designed for use as a general purpose wideband, high gain stage in communication systems and microwave instrumentation. It is ideally suited for broadband applications requiring high gain and excellent port matches over a 6 to 20 GHz frequency range. Both RF input and output ports are AC-coupled on chip.




Specifications

Symbol
Parameters/Conditions
Units
Min.
Max.
VDD
Positive Drain Voltage
V
7.5
IDD
Total Drain Current
mA
135
PDC
DC Power Dissipation
mA
1.0
Pin
CW Input Power
dBm
20
Tch
Operating Channel Temp.
+160
TA
Operating Case Temp.
-55
TSTG
Storage Temperature
-65
+150
Tmax
Maximum Assembly Temp.
(for 60 seconds maximum)
+300



Description

The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of » 0.3 mm. It incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection.




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