Features: • Wide-Frequency Range:6 20 GHz• High Gain: 17 dB• Gain Flatness: ± 1.0 dB• Return Loss: Input -15 dB Output -15 dB• Single Bias Supply Operation• Low DC Power Dissipation: PDC ~ 0.5 Watts• Medium Power: 20 GHz: P-1dB: 12 dBm Psat: 13 dBmApplicat...
HMMC-5620: Features: • Wide-Frequency Range:6 20 GHz• High Gain: 17 dB• Gain Flatness: ± 1.0 dB• Return Loss: Input -15 dB Output -15 dB• Single Bias Supply Operation• Low D...
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The HMMC-5620 amplifier is designed for use as a general purpose wideband, high gain stage in communication systems and microwave instrumentation. It is ideally suited for broadband applications requiring high gain and excellent port matches over a 6 to 20 GHz frequency range. Both RF input and output ports are AC-coupled on chip.
Symbol |
Parameters/Conditions |
Units |
Min. |
Max. |
VDD |
Positive Drain Voltage |
V |
7.5 | |
IDD |
Total Drain Current |
mA |
135 | |
PDC |
DC Power Dissipation |
mA |
1.0 | |
Pin |
CW Input Power |
dBm |
20 | |
Tch |
Operating Channel Temp. |
+160 | ||
TA |
Operating Case Temp. |
-55 |
||
TSTG |
Storage Temperature |
-65 |
+150 | |
Tmax |
Maximum Assembly Temp. (for 60 seconds maximum) |
+300 |
The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of » 0.3 mm. It incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection.