Features: • Frequency Range: 2 50 GHz• Small Signal Gain: 8.5 dB• P-1dB @ 40 GHz: 12 dBm• Noise Figure: < 6 dB @ 2 35 GHz < 10 dB @ 35 50 GHz• Return Loss: In/Out: < -10 dBSpecifications Symbol Parameters/Conditions Units Min. Max. ...
HMMC-5025: Features: • Frequency Range: 2 50 GHz• Small Signal Gain: 8.5 dB• P-1dB @ 40 GHz: 12 dBm• Noise Figure: < 6 dB @ 2 35 GHz < 10 dB @ 35 50 GHz• Return Loss: In/...
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Symbol |
Parameters/Conditions |
Units |
Min. |
Max. |
VDD |
Positive Drain Voltage |
V |
7.0 | |
IDD |
Total Drain Current |
mA |
170 | |
VG1 |
First Gate Voltage |
V |
-3.5 |
0 |
VG2 |
Second Gate Voltage |
mA |
-3.0 |
+3.0 |
PDG |
DC Power Dissipation |
watts |
12 | |
Pin |
CW Input Power |
dBm |
20 | |
Tch |
Operating Channel Temp. |
+150 | ||
Tcase |
Operating Case Temp. |
-55 |
||
TSTG |
Storage Temperature |
-65 |
+165 | |
Tmax |
Maximum Assembly Temp. (for 60 seconds maximum) |
+300 |
The HMMC-5025 was designed as a generic wide band distributed amplifier, covering the frequency span 2 50 GHz. It consists of seven stages. Each stage is made up of two cascoded FETs with gate peripheries of 48 mm per FET. Both input and output ports were designed to provide 50 ohm terminations. Bonding pads are provided in the layout to allow amplifier operation at frequencies lower than 2 GHz by means of external circuit components.
The HMMC-5025 is typically biased at VDD = 5 volts and IDD = 75 mA. The second gate is internally biased by means of a voltage divider network and an a.c. ground.