Features: Gain: 16 dBSaturated Output Power: +18 dBmOutput IP3: +25 dBmSingle Positive Supply: +5.0 V @ 101 mA50 Ohm Matched Input/Output2.26 mm x 1.35 mm x 0.1 mmApplicationThe HMC383 is ideal for use as a driver amplifi er for:• Point-to-Point Radios• Point-to-Multi-Point Radios &...
HMC383: Features: Gain: 16 dBSaturated Output Power: +18 dBmOutput IP3: +25 dBmSingle Positive Supply: +5.0 V @ 101 mA50 Ohm Matched Input/Output2.26 mm x 1.35 mm x 0.1 mmApplicationThe HMC383 is ideal for ...
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DescriptionThe HMC304MS8(E) is a passive high IP3 mixer in 8 lead plastic surface mount Mini Small...
Drain Bias Voltage (Vdd) | +5.5 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
Junction Temperature | 175 |
Continuous Pdiss (T= 85) (derate 9.9mW/ above 85) |
0.89 W |
Thermal Resistance (channel to die bottom) |
101.0/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to to +85 |
ESD Sensitivity (HBM) | Class 1A |
The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifi er which operates between 12 and 30 GHz. The amplifi er provides 16 dB of gain and +18 dBm of saturated power from a +5.0V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifi er approach in multiple radio bands.
The HMC383 amplifi er can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).