Features: ·Noise Figure: 0.9 dB·+34 dBm Output IP3·Gain: 17 dB·Very Stable Gain vs. Supply & Temperature·Single Supply: +5.0 V @ 136 mA·50 Ohm Matched OutputApplicationThe HMC375LP3 / HMC375LP3E is ideal for basestation receivers:• GSM, GPRS & EDGE• CDMA & W-CDMA• DEC...
HMC375LP3E: Features: ·Noise Figure: 0.9 dB·+34 dBm Output IP3·Gain: 17 dB·Very Stable Gain vs. Supply & Temperature·Single Supply: +5.0 V @ 136 mA·50 Ohm Matched OutputApplicationThe HMC375LP3 / HMC375LP3E...
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DescriptionThe HMC304MS8(E) is a passive high IP3 mixer in 8 lead plastic surface mount Mini Small...
Drain Bias Voltage(Vdd1,Vdd2) | +8.0 Vdc |
RF Input Power (RFin)(Vs = +5.0 Vdc) | +10 dBm |
Channel Temperature | 150 |
Continuous Pdiss (T = 85 ) (derate 15.6 mW/ above 85 ) |
1.015 W |
Thermal Resistance (channel to ground paddle) |
64.1 /W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC375LP3 & HMC375LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifi ers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise fi gure, 17 dB gain and +33 dBm output IP3 from a single supply of +5.0V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. The HMC375LP3 & HMC375LP3E share the same package with the HMC356LP3 and HMC372LP3 high IP3 LNAs. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.