Features: Noise Figure: 0.9 dB+35 dBm Output IP3Gain: 14 dBLow Loss LNA Bypass PathSingle Supply: +5.0 V @ 90 mA50 Ohm Matched OutputApplicationThe HMC373LP3 is ideal forbasestation receivers:• GSM, GPRS & EDGE• CDMA & W-CDMA• Private Land Mobile RadioPinoutSpecifications...
HMC373LP3: Features: Noise Figure: 0.9 dB+35 dBm Output IP3Gain: 14 dBLow Loss LNA Bypass PathSingle Supply: +5.0 V @ 90 mA50 Ohm Matched OutputApplicationThe HMC373LP3 is ideal forbasestation receivers:•...
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DescriptionThe HMC304MS8(E) is a passive high IP3 mixer in 8 lead plastic surface mount Mini Small...
Drain Bias Voltage (Vdd) | +8.0 Vdc |
RF Input Power LNA Mode (RFin)(Vdd = +5.0 Vdc) Bypass Mode |
+15 dBm +30 dBm |
Channel Temperature | 150 °C |
Continuous Pdiss (T= 85 °C) (derate 13.5 mW/°C above 85 °C) |
0.878 W |
Thermal Resistance (channel to die bottom) |
74.1 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -40 to +85 °C |
The HMC373LP3 is a versatile, high dynamic range GaAs MMIC Low Noise Amplifi er that integrates a low loss LNA bypass mode on the IC. The HMC373LP3 amplifi er is ideal for GSM & CDMA cellular basestation frontend receivers operating between 700 and 1000 MHz and provides 0.9 dB noise fi gure, 14 dB of gain and +35 dBm IP3 from a single supply of +5.0V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 A. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the low noise amplifi er.