HMC358MS8G

Features:

·Pout: +11 dBm
·Phase Noise: -110 dBc/Hz @100 KHz
·No External Resonator Needed
·Single Supply: 3V @ 100 mA
·15mm2 MSOP8G SMT Package


Application

Low noise MMIC VCO w/Buffer Amplifi er for C-Band applications such as:
• UNII & Pt. to Pt. Radios
• 802.11a & HiperLAN WLAN
• VSAT Radios


Pinout




Specifications

Vcc	+3.5Vdc
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85
Vtune	0 to+11V

Description

The HMC358MS8G is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC358MS8G integrates a resonator, negative esistance device, varactor diode, and buffer amplifi er. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is 11 dBm typical from a 3.0V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance.