Features: Noise Figure: 1.0 dB+38 dBm Output IP3Gain: 17 dBVery Stable Gain vs. Supply & TemperatureSingle Supply: +5.0V @ 104 mA50 Ohm Matched OutputApplicationThe HMC356LP3 / HMC356LP3E is ideal forbasestation receivers:• GSM 450 & GSM 480• CDMA 450• Private Land Mobile...
HMC356LP3E: Features: Noise Figure: 1.0 dB+38 dBm Output IP3Gain: 17 dBVery Stable Gain vs. Supply & TemperatureSingle Supply: +5.0V @ 104 mA50 Ohm Matched OutputApplicationThe HMC356LP3 / HMC356LP3E is ide...
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DescriptionThe HMC304MS8(E) is a passive high IP3 mixer in 8 lead plastic surface mount Mini Small...
Drain Bias Voltage (Vdd) | +8.0 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +15 dBm |
Channel Temperature | 150 |
Continuous Pdiss (T = 85) (derate 14 mW/ above 85) |
0.910 W |
Thermal Resistance (channel to ground paddle) |
71.4/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC356LP3 & HMC356LP3E are high dynamic range GaAs PHEMT MMIC Low Noise Amplifi ers is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1.0 dB noise fi gure, 17 dB gain and +38 dBm output IP3 from a single supply of +5.0V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias. The HMC356LP3 & HMC356LP3E share the same package and pinout with the HMC372LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.