HMC349MS8G

Features:

·High Isolation: 70 dB @ 1 GHz
                           57 dB @ 2 GHz
·Single Positive Control: 0/+5V
·+52 dBm Input IP3
·Non-Refl ective Design
·All Off State
·Ultra Small MS8G SMT Package: 14.8 mm2


Application

The HMC349MS8G is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation


Pinout




Specifications

RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz)	+30 dBm (T = +85 )
Supply Voltage Range (Vdd)	+7 Vdc
Control Voltage Range (Vctl)	-1V to Vdd +1V
Hot Switch Power Level (Vdd = +5V)	+30 dBm
Channel Temperature	150
Continuous Pdiss (T = 85 ) (derate 12 mW/ above 85 )	0.75 W
Thermal Resistance	87 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC349MS8G is a high isolation nonrefl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The HMC349MS8G switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an "all off" state.