Features: Noise Figure : 3.5 dBGain: 20 dBSingle Supply : +3V @ 36 mASmall Size: 1.06 mm x 2.02 mmApplicationThe HMC342 is ideal for:• Microwave Point-to-Point Radios• Millimeterwave Point-to-Point Radios• VSAT & SATCOMSpecifications Drain Bias Voltag...
HMC342: Features: Noise Figure : 3.5 dBGain: 20 dBSingle Supply : +3V @ 36 mASmall Size: 1.06 mm x 2.02 mmApplicationThe HMC342 is ideal for:• Microwave Point-to-Point Radios• Millimeterwave Poi...
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DescriptionThe HMC304MS8(E) is a passive high IP3 mixer in 8 lead plastic surface mount Mini Small...
Drain Bias Voltage (Vdd) | +5.5 Vdc |
RF Input Power (RFin)(Vdd = +3.0 Vdc)) | 0 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T = 85 °C) (derate 3.62 mW/°C above 85 °C) |
0.326 W |
Thermal Resistance (channel to die bottom) |
276 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -55 to +85 °C |
The HMC342 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 13 to 25 GHz. The HMC342 chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.14 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3.0V @ 36 mA with a noise fi gure of 3.5 dB. All data is with the chip in a 50 ohm test fi xture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils).