HMC326MS8G / 326MS8GE

      The HMC326MS8G & HMC326MS8GE are high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifi ers which operate between 3.0 and 4.5 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.The amplifi er provides 21 dB of gain  and +26 dBm of saturated power from a +5.0V supply voltage.Power down capability is available to conserve current consumption when the amplifi er is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.
      The HMC326MS8G & HMC326MS8GE has 6 features.The first one is Psat Output Power: +26 dBm.The second one is > 40% PAE.The third one is Output IP3: +36 dBm.The fourth one is High Gain: 21 dB.The fifth one is Vs: +5.0V.The sixth one is Ultra Small Package: MSOP8G.
      The HMC326MS8G / HMC326MS8GE is ideal for:Microwave Radios, Broadband Radio Systems Wireless Local Loop Driver Amplifi er.
      The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A suffi cient number of via holes should be used to connect the top and bottom ground planes.The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
      The HMC326MS8G & HMC326MS8GE has some information about absolute maximum ratings.Collector Bias Voltage (Vcc) is +5.5 Vdc.Control Voltage Range (Vpd) is +5.5 Vdc.RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) is +15 dBm.Junction Temperature is 150 °C.Continuous Pdiss (T = 85 °C)(derate 14 mW/°C above 85 °C) is 0.916 W.Thermal Resistance (junction to ground paddle) is 71 °C/W.Storage Temperature is -65 to +150 °C.Operating Temperature is -40 to +85 °C.ESD Sensitivity (HBM) is Class 1A.