HMC313

Features:

·P1dB Output Power: +14 dBm
·Output IP3: +27 dBm
·Gain: 17 dB
·Single Supply: +5V
·High Reliability GaAs HBT Process
·Ultra Small Package: SOT26


Application

Ideal as a Driver & Amplifi er for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5.0 - 6.0 GHz UNII & HiperLAN


Pinout




Specifications

Collector Bias Voltage (Vcc)	+5.5 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 85 ) (derate 3.99 mW/ above 85 )	0.259 W
Thermal Resistance (junction to lead)	251 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi er that operates from a single Vcc supply. The surface mount SOT26 amplifi er can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The "HMC313 Biasing and Impedance Matching Techniques" application note available within the "Application Notes" section offers recommendations for narrow band operation.