Features: • 2.5 V ± 5% operation and 1.5 V (VDDQ)• 16M bit density• Internal self-timed late write• Byte write control (4 byte write selects, one for each 9-bit)• Optional ×18 configuration• HSTL compatible I/O• Programmable impedance output drivers•...
HM64YLB36514: Features: • 2.5 V ± 5% operation and 1.5 V (VDDQ)• 16M bit density• Internal self-timed late write• Byte write control (4 byte write selects, one for each 9-bit)• Optio...
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Features: • 2.5 V ± 5% operation and 1.5 V (VDDQ)• 32-Mbit density• Synchronous ...
Features: • 2.5 V ± 5% operation and 1.5 V (VDDQ)• 16M bit density• Byte write c...
Parameter |
Symbol |
Rating |
Unit |
Notes |
Input voltage on any pin |
VIN |
−0.5 to VDDQ + 0.5 |
V |
1, 4 |
Core supply voltage |
VDD |
−0.5 to +3.13 |
V |
1 |
Output supply voltage |
VDDQ |
−0.5 to +2.1 |
V |
1, 4 |
Operating temperature |
TOPR |
0 to +85 |
||
Storage temperature |
TSTG |
−55 to +125 |
||
Output short-circuit current |
IOUT |
25 |
mA |
|
Latch up current |
ILI |
200 |
mA |
|
Package junction to top thermal resistance |
J-top |
6.5 |
/W |
5 |
Package junction to board thermal resistance |
J-board |
12 |
/W |
5 |
The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119- bump BGA.
Note of HM64YLB36514: All power supply and ground pins must be connected for proper operation of the device.