HM62W8511H

Features:

·  Single supply : 3.3 V ± 0.3 V
·  Access time 12/15 ns (max)
·  Completely static memory
  - No clock or timing strobe required
·  Equal access and cycle times
·  Directly TTL compatible
  - All inputs and outputs
·  Operating current : 150/130 mA (max)
·  TTL standby current : 60/50 mA (max)
·  CMOS standby current : 5 mA (max)
                         : 1 mA (max) (L-version)
·  Data retension current : 0.6 mA (max) (L-version)
·  Data retension voltage : 2 V (min) (L-version)
·  Center VCC and VSS type pinout


Pinout




Specifications

Parameter	Symbol	Value	Unit
Supply voltage relative to VSS	VCC	0.5 to + 4.6	V
Voltage on any pin relative to VSS	VT	0.5*1 to VCC + 0.5*2	V
Power dissipation	PT	1.0	W
Operating temperature	Topr	0 to +70
Storage temperature	Tstg	55 to +125
Storage temperature under bias	Tbias	10 to +85

Description

The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W8511H is packaged in 400-mil 36-pin SOJ for high density surface mounting.