HM62W8127HB

PinoutSpecifications Parameter Symbol Value Unit Supply voltage relative to VSS VCC 0.5 to +4.6 V Voltage on any pin relative to VSS VT 0.5*1 to VCC+0.5 V Power dissipation PT 1.0 W Operating temperatue range Topr 0 to +70 °C Storage...

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HM62W8127HB Picture
SeekIC No. : 004363569 Detail

HM62W8127HB: PinoutSpecifications Parameter Symbol Value Unit Supply voltage relative to VSS VCC 0.5 to +4.6 V Voltage on any pin relative to VSS VT 0.5*1 to VCC+0.5 V Po...

floor Price/Ceiling Price

Part Number:
HM62W8127HB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.5 to +4.6
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC+0.5
V
Power dissipation
PT
1.0
W
Operating temperatue range
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to + 85
°C

Notes: 1. VT min = 2.5 V for pulse width (under shoot)  10 ns



Description

The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word×8-bit. It realize high speed access time (25/30 ns) with employing 0.8 mm shrink CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W8127HB is packaged in 400-mil 32-pin SOJ for high density surface mounting.




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