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HM62W8127H

Features: ` Single 3.3 V supply: 3.3 V ± 0.3 V` Access time 30/35/45 ns (max)` Completely static memory - No clock or timing strobe required` Equal access and cycle times` Directly CMOS compatible - All inputs and outputs` 400-mil 32/36-pin SOJ package` Center VCC and VSS type pinoutPinoutSpecific...

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SeekIC No. : 004363568 Detail

HM62W8127H: Features: ` Single 3.3 V supply: 3.3 V ± 0.3 V` Access time 30/35/45 ns (max)` Completely static memory - No clock or timing strobe required` Equal access and cycle times` Directly CMOS compatible -...

HM62W8127H Data Sheet

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Part Number:
HM62W8127H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Single 3.3 V supply: 3.3 V ± 0.3 V
`  Access time 30/35/45 ns (max)
`  Completely static memory
     - No clock or timing strobe required
`  Equal access and cycle times
`  Directly CMOS compatible
     - All inputs and outputs
`  400-mil 32/36-pin SOJ package
`  Center VCC and VSS type pinout


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.5 to +4.6
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC+0.5
V
Power dissipation
PT
1.0
W
Operating temperatue range
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to + 85
°C

Notes: 2.5 V for pulse width (under shoot) 10 ns



Description

The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word×8/9-bit. It realize high speed access time (30/35/45 ns) with employing 0.8 mm CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W8127H/HM62W9127H is packaged in 400-mil 32/36-pin SOJ for high density surface mounting.




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