HM62W1664HB

Features: ` Single 3.3 V supply (3.3 V ± 0.3V)` Access time: 25/30 ns (max)` Completely static memory - No clock or timing strobe required` Equal access and cycle times` Directly LV-TTL compatible - All inputs and outputs` 400-mil 44-pin SOJ package` Center VCC and VSS type pinoutPinoutSpecificati...

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HM62W1664HB Picture
SeekIC No. : 004363563 Detail

HM62W1664HB: Features: ` Single 3.3 V supply (3.3 V ± 0.3V)` Access time: 25/30 ns (max)` Completely static memory - No clock or timing strobe required` Equal access and cycle times` Directly LV-TTL compatible -...

floor Price/Ceiling Price

Part Number:
HM62W1664HB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Description



Features:

`  Single 3.3 V supply (3.3 V ± 0.3V)
`  Access time: 25/30 ns (max)
`  Completely static memory
     - No clock or timing strobe required
`  Equal access and cycle times
`  Directly LV-TTL compatible
     - All inputs and outputs
`  400-mil 44-pin SOJ package
`  Center VCC and VSS type pinout



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.5 to + 4.6
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC+0.5
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to + 85
°C
Notes:
1. VT min = 2.5 V for pulse width (under shoot)h 10 ns



Description

The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword×16-bit. It realize high speed access time (25/30 ns) with employing 0.8 mm CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W1664HB is packaged in 400-mil 44-pin SOJ for high density surface mounting.




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