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HM62W16258BI

Features: • Single 3.3 V supply: 3.3 V ± 0.3 V• Fast access time: 70 ns (max)• Power dissipation: -Active: 9.9 mW (typ) -Standby: 3.3 mW (typ)• Completely static memory. -No clock or timing strobe required• Equal access and cycle times• Common data input and out...

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SeekIC No. : 004363561 Detail

HM62W16258BI: Features: • Single 3.3 V supply: 3.3 V ± 0.3 V• Fast access time: 70 ns (max)• Power dissipation: -Active: 9.9 mW (typ) -Standby: 3.3 mW (typ)• Completely static memory. -No ...

HM62W16258BI Data Sheet

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Part Number:
HM62W16258BI
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 70 ns (max)
• Power dissipation:
   -Active: 9.9 mW (typ)
   - Standby: 3.3 mW (typ)
• Completely static memory.
   - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
   - Three state output
• Battery backup operation.
• Temperature range: 40 to 85°C


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Terminal voltage on any pin relative to VSS VCC 0.5 to + 4.6 V
Terminal voltage on any pin relative to VSS VT 0.5*1 to VCC + 0.3*2 V
Power dissipation PT 1.0 W
Storage temperature range Tstg 55 to +125 °C
Storage temperature range under bias Tbias 40 to +85 °C
Notes: 1. VT min: 3.0 V for pulse half-width 30 ns.
           2. Maximum voltage is +4.6 V.


Description

The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.




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