HM62W16258B

Features:

• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
   - Active: 9.9 mW (typ)
   -Standby: 3.3 W (typ)
• Completely static memory.
   - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
   - Three state output
• Battery backup operation.


Pinout




Specifications

Parameter	Symbol	Value	Unit
Power supply voltage relative to VSS	VCC	0.5 to +4.6	V
Terminal voltage on any pin relative to VSS	VT	0.5*1 to VCC + 0.3*2	V
Power dissipation	PT	1.0	W
Storage temperature range	Tstg	55 to +125	°C
Storage temperature range under bias	Tbias	10 to +85	°C

Notes:
1. VT min: 3.0 V for pulse half-width  30 ns.
2. Maximum voltage is +4.6 V.


Description

The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.