HM62V8512C

Features:

`  Single 3.0 V supply: 2.7 V to 3.6 V
`  Access time: 55/70 ns (max)
`  Power dissipation
    - Active: 6.0 mW/MHz (typ)
    -Standby: 2.4 µW (typ)
`  Completely static memory. No clock or timing strobe required
`  Equal access and cycle times
`  Common data input and output: Three state output
`  Directly LV-TTL compatible: All inputs
`  Battery backup operation


Pinout




Specifications

Parameter	Symbol	Value	Unit
Power supply voltage	VCC	0.5 to +4.6	V
Voltage on any pin relative to VSS	VT	0.5*1 to VCC + 0.5*2	V
Power dissipation	PT	1.0	W
Operating temperature	Topr	20 to +70
Storage temperature	Tstg	55 to +125
Storage temperature under bias	Tbias	20 to +85

Description

The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword ´ 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512C is suitable for battery backup system.