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HM62V8512B

Features: • Single 3.0 V supply: 2.7 V to 3.6 V• Access time: 70/85 ns (max)• Power dissipation Active: 15 mW/MHz (typ) Standby: 3 µW (typ)• Completely static memory. No clock or timing strobe required• Equal access and cycle times• Common ...

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SeekIC No. : 004363549 Detail

HM62V8512B: Features: • Single 3.0 V supply: 2.7 V to 3.6 V• Access time: 70/85 ns (max)• Power dissipation Active: 15 mW/MHz (typ) Standby: 3 µW (typ)• Completely ...

HM62V8512B Data Sheet

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Part Number:
HM62V8512B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  Single 3.0 V supply: 2.7 V to 3.6 V
•  Access time: 70/85 ns (max)
•  Power dissipation
 Active: 15 mW/MHz (typ)
  Standby: 3 µW (typ)
•  Completely static memory. No clock or timing strobe required
•  Equal access and cycle times
•  Common data input and output: Three state output
•  Directly LV-TTL compatible: All inputs
•  Battery backup operation


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Power supply voltage VCC 0.5 to +7.0 V
Voltage on any pin relative to VSS VT 0.5* 1 to VCC + 0.3* 2 V
Power dissipation PT 1.0 W
Operating temperature Topr 20 to +70
Storage temperature Tstg 55 to +125
Storage temperature under bias Tbias 20 to +85
Notes: 1. 3.0 V for pulse half-width 30 ns
2. Maximum voltage is 4.6 V


Description

The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit.  It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.  The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512B is suitable for battery backup system.




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