Features: ` Single 3 V supply` Fast access time: 120/150 ns (max)` Power dissipation: - Active: 18 mW/MHz (typ) - Standby: 3 W (typ)` Completely static memory. No clock or timing strobe required` Equal access and cycle times` Common data input and output. Three state output` Directry CMOS compatib...
HM62V8128B: Features: ` Single 3 V supply` Fast access time: 120/150 ns (max)` Power dissipation: - Active: 18 mW/MHz (typ) - Standby: 3 W (typ)` Completely static memory. No clock or timing strobe required` Eq...
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Parameter |
Symbol |
Value |
Unit |
Power supply voltage*1 |
VCC |
0.5 to + 4.6 |
V |
Terminal voltage*1 |
VT |
0.5*2 to VCC + 0.3*3 |
V |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
Storage temperature under bias |
Tbias |
10 to 85 |
°C |
The Hitachi HM62V8128B is a CMOS static RAM organized 131,072-word × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 mm Hi-CMOS shrink process technology. HM62V8128B offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The device, packaged in a 525-mil SOP (460-mil body SOP) or a 8 mm × 20 mm TSOP with thickness of 1.2 mm, is available for high density mounting. TSOP package is suitable for cards, and reverse type TSOP is also provided.