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HM62V16256CBP

Features: • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V• Fast access time: 55 ns/70 ns (max)• Power dissipation:¾ Active: 5.0 mW/MHz (typ)(VCC = 2.5 V): 6.0 mW/MHz (typ) (VCC = 3.0 V)¾ Standby: 2 mW (typ) (VCC = 2.5 V): 2.4 mW (typ) (VCC = 3.0 V)• Completely...

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SeekIC No. : 004363538 Detail

HM62V16256CBP: Features: • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V• Fast access time: 55 ns/70 ns (max)• Power dissipation:¾ Active: 5.0 mW/MHz (typ)(VCC = 2.5 V): 6.0 mW/MHz (typ) (...

HM62V16256CBP Data Sheet

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Part Number:
HM62V16256CBP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55 ns/70 ns (max)
• Power dissipation:
¾ Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
¾ Standby: 2 mW (typ) (VCC = 2.5 V): 2.4 mW (typ) (VCC = 3.0 V)
• Completely static memory. ¾ No clock or timing strobe required
• Equal access and cycle times
• Common data input and output. ¾ Three state output
• Battery backup operation. ¾ 2 chip selection for battery backup


Specifications

SYMBOL
PARAMETERS
RATING
UNITS
V CC
V T
P T
T stg
Tbias		 Power supply voltage relative to VSS
Terminal voltage on any pin relative to V
Power dissipation
Storage temperature range
Storage temperature range under bias
 0.5 to + 4.6
0.5*1 to VCC + 0.3*2
1.0
55 to +125
20 to +85
 V
V
W
°C
°C



Description

The Hitachi HM62V16256CBP Series is 4-Mbit static RAM organized 262,144-word ´ 16-bit.HM62V16256CBP Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48 bumps chip size package with 0.75 mm bump pitch for high density surface mounting.




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