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HM62V16100I

Features: • Single 3.0 V supply: 2.7 V to 3.6 V• Fast access time: 45/55 ns (max)• Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 W (typ)• Completely static memory. No clock or timing strobe required• Equal access and cycle times•...

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SeekIC No. : 004363535 Detail

HM62V16100I: Features: • Single 3.0 V supply: 2.7 V to 3.6 V• Fast access time: 45/55 ns (max)• Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 W (typ)• Completely ...

HM62V16100I Data Sheet

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Part Number:
HM62V16100I
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 45/55 ns (max)
• Power dissipation:
 Active: 9 mW/MHz (typ)
 Standby: 1.5 W (typ)
• Completely static memory.
 No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
 Three state output
• Battery backup operation.
 2 chip selection for battery backup
• Temperature range: −40 to +85°C


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
VCC
−0.5 to +4.6
V
Terminal voltage on any pin relative to VSS
VT
−0.5*1 to VCC + 0.3*2
V
Power dissipation
PT
1.0
W
Storage temperature range
Tstg
−55 to +125
°C
Storage temperature range under bias
Tbias
−40 to +85
°C
Notes:
1. VT min: −2.0 V for pulse half-width 10 ns.
2. Maximum voltage is +4.6 V.


Description

The HM62V16100I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. HM62V16100I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has the package variations of 48-bump chip size package with 0.75 mm bump pitch and 48-pin plastic TSOPI for high density surface mounting.




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