Features: ` Power supply: 3.3 V +10%, 5%` Clock frequency: 200 MHz to 250 MHz` Internal self-timed late write` Byte write control (2 byte write selects, one for each 9-bit)` Optional ´36 configuration` HSTL compatible I/O` Programmable impedance output drivers` User selective input trip-poin...
HM62G18512: Features: ` Power supply: 3.3 V +10%, 5%` Clock frequency: 200 MHz to 250 MHz` Internal self-timed late write` Byte write control (2 byte write selects, one for each 9-bit)` Optional ´36 confi...
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Symbol |
PARAMETER |
Value
|
Notes |
Unit |
VIN |
Input voltage on any pin |
0.5 to VDDQ + 0.5 |
1, 4 |
V |
VDD |
Core supply voltage |
0.5 to 3.9 |
1 |
V |
VDDQ |
Output supply voltage |
0.5 to 2.2 |
1, 4
|
V |
TOPR |
Operating temperature |
0 to 70 |
°C | |
TSTG |
Storage temperature |
55 to 125
|
°C | |
Tj |
Junction temperature |
110 |
°C | |
IOUT |
Output shortcircuit current |
25 |
mA | |
ILI |
Latch up current |
200 |
mA | |
qJC |
Package junction to case thermal resistance |
2 |
5, 7 |
°C/W |
qJB |
Package junction to ball thermal resistance |
5 |
6, 7 |
°C/W |
The HM62G18512 is a synchronous fast static RAM organized as 512-kword ´ 18-bit. HM62G18512 has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119- bump BGA.