HM628512

Features: ` High speed: Fast access time: - 55/65/70 ns (max)` Low power - Standby: 10 mW (typ) (L/L-SL version) - Operation: 75 mW (typ) (f = 1 MHz)` Single 5 V supply` Completely static memory No clock or timing strobe required` Equal access and cycle times` Common data input and output: Three s...

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SeekIC No. : 004363517 Detail

HM628512: Features: ` High speed: Fast access time: - 55/65/70 ns (max)` Low power - Standby: 10 mW (typ) (L/L-SL version) - Operation: 75 mW (typ) (f = 1 MHz)` Single 5 V supply` Completely static memory No ...

floor Price/Ceiling Price

Part Number:
HM628512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

`  High speed: Fast access time:
     - 55/65/70 ns (max)
`  Low power
     - Standby: 10 mW (typ) (L/L-SL version)
     - Operation: 75 mW (typ) (f = 1 MHz)
`  Single 5 V supply
`  Completely static memory No clock or timing strobe required
`  Equal access and cycle times
`  Common data input and output: Three state output
`  Directly TTL compatible: All inputs and outputs
`  Capability of battery backup operation (L/L-SL version)



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS*1
VT
0.5*2 to + 4.6
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to +85
°C
Notes:
1. Relative to VSS.
2. 3.0 V for pulse half-width  30 ns



Description

The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 mm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. LP-version is suitable for battery backup system.




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