Features: The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application ...
HM628511H: Features: The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor ...
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Parameter | Symbol | Value | Unit |
Supply voltage relative to VSS | VCC | 0.5 to + 7.0 | V |
Voltage on any pin relative to VSS | VT | 0.5*1 to VCC + 0.5*2 | V |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 | |
Storage temperature under bias | Tbias | 10 to +85 |
The HM628511H features:
· Single 5.0 V supply : 5.0 V ± 10 %
· Access time 10 /12 /15 ns (max)
· Completely static memory
- No clock or timing strobe required
· Equal access and cycle times
· Directly TTL compatible
- All inputs and outputs
· Operating current : 180 / 160 / 140 mA (max)
· TTL standby current : 70 / 60 / 50 mA (max)
· CMOS standby current : 5 mA (max)
: 1.2 mA (max) (L-version)
· Data retension current: 0.8 mA (max) (L-version)
· Data retension voltage: 2 V (min) (L-version)
· Center VCC and VSS type pinout