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HM51W4400B

Features: · Single 3.3 V (± 0.3 V)· High speed-Access time: 70 ns/80 ns (max)· Low power dissipation-Active mode: 252 mW/216 mW (max)-Standby mode: 7.2 mW (max) 0.18 mW (max) (L-version)· Fast page mode capability· 1024 refresh cycles : 16 ms: 128 ms (L-version)· 4 variations of refresh-RAS-only r...

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SeekIC No. : 004363417 Detail

HM51W4400B: Features: · Single 3.3 V (± 0.3 V)· High speed-Access time: 70 ns/80 ns (max)· Low power dissipation-Active mode: 252 mW/216 mW (max)-Standby mode: 7.2 mW (max) 0.18 mW (max) (L-version)· Fast page ...

HM51W4400B Data Sheet

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Part Number:
HM51W4400B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Single 3.3 V (± 0.3 V)
·  High speed
- Access time: 70 ns/80 ns (max)
·  Low power dissipation
- Active mode: 252 mW/216 mW (max)
- Standby mode: 7.2 mW (max) 0.18 mW (max) (L-version)
·  Fast page mode capability
·  1024 refresh cycles : 16 ms
: 128 ms (L-version)
·  4 variations of refresh
- RAS-only refresh
- CAS-before-RAS refresh
- Hidden refresh
-Self refresh (L-version)
·  Test function
·  Battery backup operation (L-version)


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to +4.6 V
Supply voltage relative to VSS VCC 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125



Description

The Hitachi HM51W4400B is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. It has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51W4400B offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the product to be packaged in standard 300-mil 26-pin plastic SOJ and standard 300-mil 26-pin plastic TSOP II.




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