DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has reached higher density, higher performance and various functions by using 1.3m CMOS process technology and some new CMOS circuit design technologies. Multiplexed address input permits the device to b...
HM511000A series: DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has reached higher density, higher performance and various functions by using 1.3m CMOS process technol...
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The HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has reached higher density, higher performance and various functions by using 1.3m CMOS process technology and some new CMOS circuit design technologies. Multiplexed address input permits the device to be packaged in standard 18-pin plastic DIP, 20-pin plastic ZIP and 20-pin plastic SOJ.
There are some features of HM511000A series as follows: (1)high speed: 60 ns/70 ns/80 ns/100 ns/120 ns (max) access time; (2)low power dissipation: 495 mW/440 mW/385 mW/330 mW/275 mW (max) at active mode and 11 mW (max) at standby mode; (3)single 5 V supply (±10%); (4)fast page mode capability; (5)512 refresh cycles: 8 ms; (6)2 V variations of refresh: RAS only refresh and CAS before RAS refresh.
What comes next is about the absolute maximum ratings of HM511000A series: (1)voltage on any pin relative to VSS, VT: -1.0 to +7.0 V; (2)supply voltage relative to VSS, VCC: -1.0 to +7.0 V; (3)short circuit output current, Iout: 50 mA; (4)power dissipation, PT: 1.0 W; (5)operating temperature, Topr: 0 to +70; (6)storage temperature, Tstg: -55 to +125.