Features: · Single 3.3 V (±0.15 V) (HM51W4265C-6R) Single 3.3 V (±0.3 V) (HM51W4265C-6/7/8)· High speed- Access time: 60 ns/70 ns/80 ns (max)· Low power dissipation- Active mode: 576 mW/552 mW/468 mW/396 mW (max)- Standby mode: 6.9 mW (max) (HM51W4265C-6R) 7.2 mW (max) (HM51W4265C-6/7/8) 0.69 mW (...
HM51W4265C: Features: · Single 3.3 V (±0.15 V) (HM51W4265C-6R) Single 3.3 V (±0.3 V) (HM51W4265C-6/7/8)· High speed- Access time: 60 ns/70 ns/80 ns (max)· Low power dissipation- Active mode: 576 mW/552 mW/468 m...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to +4.6 | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W4265C Series is a CMOS dynamic RAM organized as 262,144-word ×16-bit.
HM51W4265C Series has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. It offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits them to be packaged in standard 400-mil 44-pin plastic TSOPII.