Features: ` Single 3.3 V supply: 3.3 V ± 0.3 V` Access time : 60 ns/70 ns (max)` Power dissipation-Active mode : 612 mW /540 mW (max)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)` EDO page mode capability` Refresh cycles-1024 refresh cycles : 16 ms: 128 ms (L-version)` 4 variations of re...
HM51W18165I: Features: ` Single 3.3 V supply: 3.3 V ± 0.3 V` Access time : 60 ns/70 ns (max)` Power dissipation-Active mode : 612 mW /540 mW (max)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)` EDO page...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to VCC + 0.5 (+ 4.6 V (max)) | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | -40 to +85 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W18165I is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W18165I offers Extended Data Out (EDO) Page Mode as a high speed access mode. It is packaged in 42-pin plastic SOJ.