Features: • Single 3.3 V (±0.3 V)• High speed-Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation-Active mode : 468 mW/414 mW/360 mW (max) (HM51W16165A Series): 666 mW/594 mW/540 mW (max) (HM51W18165A Series)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)• E...
HM51W18165A: Features: • Single 3.3 V (±0.3 V)• High speed-Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation-Active mode : 468 mW/414 mW/360 mW (max) (HM51W16165A Series): 666 mW/594 ...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to VCC + 0.5 ( 4.6 V (max)) | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W16165A Series, HM51W18165A Series are CMOS dynamic RAMs organized as 1,048,576-word× 16-bit. They employ the most advanced CMOS technology for high performance and low power. HM51W16165A Series, HM51W18165A Series offer Extended Data Out (EDO) Page Mode as a high speed access mode.