HM51W18165

Features:

·  Single 3.3 V (±0.3 V)
·  Access time: 50 ns/60 ns/70 ns (max)
·  Power dissipation
     - Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)
                           : 684 mW /612 mW /540 mW (max) (HM51W18165 Series)
     - Standby mode : 7.2 mW (max)
                               : 0.54 mW (max) (L-version)
·  EDO page mode capability
·  Refresh cycles
     - 4096 refresh cycles : 64 ms (HM51W16165 Series)
                                       : 128 ms (L-version)
     - 1024 refresh cycles : 16 ms (HM51W18165 Series)
                                       : 128 ms (L-version)
·  4 variations of refresh
     - RAS-only refresh
     - CAS-before-RAS refresh
     - Hidden refresh
     - Self refresh (L-version)
·  2CAS-byte control
·  Battery backup operation (L-version)


Pinout




Specifications

Parameter	Symbol	Value	Unit
Terminal voltage on any pin relative to VSS	VT	0.5 to VCC + 0.5 ( 4.6 V (max))	V
Power supply voltage relative to VSS	VCC	0.5 to +4.6	V
Short circuit output current	Iout	50	mA
Power dissipation	PT	1.0	W
Operating temperature	Topr	0 to +70
Storage temperature	Tstg	55 to +125

Description

The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word ´ 16-bit. They employ the most advanced CMOS technology for high performance and low power. HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil 50-pin plastic TSOP.