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HM51W17400B

Features: · Single 3.3 V (±0.3 V)· High speed-Access time : 60 ns/ 70 ns/ 80 ns (max)· Low power dissipation*Active mode : 396 mW/360 mW/324 mW(max)*Standby mode : 7.2 mW (max): 0.36 mW (max) (L-version)· Fast page mode capability· Long refresh period-2048 refresh cycles : 32 ms: 128 ms (L-version...

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SeekIC No. : 004363402 Detail

HM51W17400B: Features: · Single 3.3 V (±0.3 V)· High speed-Access time : 60 ns/ 70 ns/ 80 ns (max)· Low power dissipation*Active mode : 396 mW/360 mW/324 mW(max)*Standby mode : 7.2 mW (max): 0.36 mW (max) (L-ver...

HM51W17400B Data Sheet

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Part Number:
HM51W17400B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Single 3.3 V (±0.3 V)
·  High speed
- Access time : 60 ns/ 70 ns/ 80 ns (max)
·  Low power dissipation
* Active mode : 396 mW/360 mW/324 mW(max)
* Standby mode : 7.2 mW (max)
: 0.36 mW (max) (L-version)
·  Fast page mode capability
·  Long refresh period
- 2048 refresh cycles : 32 ms
: 128 ms (L-version)
·  4 variations of refresh
- RAS-only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self refresh (L-version)
·  Battery backup operation (L-version)
·  Test function
- 16-bit parallel test mode


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to VCC + 0.5 ( 4.6 V (max)) V
Supply voltage relative to VSS VCC 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125



Description

The Hitachi HM51W17400B is a CMOS dynamic RAM organized 4,194,304-word × 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17400B offers Fast Page Mode as a high speed access mode.




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