Features: • Single 3.3 V (±0.3 V)• Access time: 50 ns/60 ns/70 ns (max)• Power dissipation-Active mode : 324 mW/288mW/252 mW (max) (HM51W16400 Series): 360 mW/324 mW/288 mW (max) (HM51W17400 Series)-Standby mode : 7.2 mW (max): 0.36 mW (max) (L-version)• Fast page mode capa...
HM51W16400: Features: • Single 3.3 V (±0.3 V)• Access time: 50 ns/60 ns/70 ns (max)• Power dissipation-Active mode : 324 mW/288mW/252 mW (max) (HM51W16400 Series): 360 mW/324 mW/288 mW (max) (...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to VCC + 0.5 (+ 4.6 V (max)) | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W16400 Series, HM51W17400 Series are CMOS dynamic RAMs organized 4,194,304- word × 4-bit. They employ the most advanced 0.5 mm CMOS technology for high performance and low power. The HM51W16400 Series, HM51W17400 Series offer Fast Page Mode as a high speed access mode. They have package variations of standard 300-mil 26-pin plastic SOJ and standard 300-mil 26-pin plastic TSOP.