HM51W16165J-5

The HM51W16165J-5 is designed as a CMOS dynamic RAM organized as 1,048,576-word x 16bit.  HM51W16165J-5 employs the most advanced CMOS technology for high performance and low power.

HM51W16165J-5 has eight features. (1)Single 3.3V+/-0.3V. (2)Access time 50ns. (3)Power dissipation active mode is max 396mW. (4)EDO page mode capability. (5)Refresh cycles which would be 64ms for 4096 refresh cycles and it would be 128ms for L-version. (6)4 variations of refresh. (7)2CAS-byte control. (8)Battery backup operation (L-version). Those are all the main features.

Some absolute maximum ratings of HM51W16165J-5 have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -0.5V to Vcc+0.5V. (2)Its supply voltage relative to Vss would be from -0.5V to +4.6V. (3)Its short circuit output current would be 50mA. (4)Its power dissipation would be 1.0W. (5)Its operating temperature range would be from 0°C to 70°C. (6)Its storage temperature range would be from -55°C to +125°C. It should be noted that stresses above those values listed in absolute maximum ratings may cause permanent damage to the device.

Also some DC electrical characteristics of HM51W16165J-5 are concluded as follow. (1)Its operating current would be max 110mA. (2)Its standby current would be max 2mA for TTL interface and would be max 1mA for CMOS interface. (2)Its standby current (L-version) would be max 150uA for CMOS interface. (3)Its RAS-only refresh current would be max 110mA. (4)Its input leakage current would be min -10uA and max +10uA. (5)Its output leakage current would be min -10uA and max +10uA. (6)Its output high voltage would be min 2.4V and max Vcc. (7)Its output low voltage would be min 0V and max 0.4V. (8)Its input capacitance address would be max 5pF. (9)Its input capacitance clocks would be max 7pF. (10)Its output capacitance would be max 7pF. And so on. If you have any question or suggestion about HM51W16165J-5, please contact us for details. Thank you!