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HM51W16160B

Features: • Single 3.3 V (±0.3 V)• High speed-Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation-Active mode: 360 mW/324 mW/288 mW (max) (HM51W16160B Series) 612 mW/540 mW/468 mW (max) (HM51W18160B Series)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)• Fas...

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SeekIC No. : 004363394 Detail

HM51W16160B: Features: • Single 3.3 V (±0.3 V)• High speed-Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation-Active mode: 360 mW/324 mW/288 mW (max) (HM51W16160B Series) 612 mW/540 mW...

HM51W16160B Data Sheet

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Part Number:
HM51W16160B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3 V (±0.3 V)
• High speed
- Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
- Active mode: 360 mW/324 mW/288 mW (max) (HM51W16160B Series) 612 mW/540 mW/468 mW (max) (HM51W18160B Series)
- Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
• Fast page mode capability
• Long refresh period
- 4096 refresh cycles : 64 ms (HM51W16160B Series)
: 128 ms (L-version)
- 1024 refresh cycles : 16 ms (HM51W18160B Series)
: 128 ms (L-version)


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to VCC + 0.5 ( 4.6 V (max)) V
Supply voltage relative to VSS VCC 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125



Description

The Hitachi HM51W16160B Series, HM51W18160B Series are CMOS dynamic RAMs organized as 1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and low power. The HM51W16160B Series, HM51W18160B Series offer Fast Page Mode as a high speed access mode.




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