Features: • Single 3.3 V (±0.3 V)• Access time: 50 ns/60 ns/70 ns (max)• Power dissipation-Active mode : 396 mW/360 mW/324 mW (max) (HM51W16160 Series) 684 mW/612 mW/540 mW (max) (HM51W18160 Series)-Standby mode : 7.2 mW (max): 0.54 mW (max) (L-version)• Fast page mode capa...
HM51W16160: Features: • Single 3.3 V (±0.3 V)• Access time: 50 ns/60 ns/70 ns (max)• Power dissipation-Active mode : 396 mW/360 mW/324 mW (max) (HM51W16160 Series) 684 mW/612 mW/540 mW (max) (...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
• Single 3.3 V (±0.3 V)
• Access time: 50 ns/60 ns/70 ns (max)
• Power dissipation
- Active mode : 396 mW/360 mW/324 mW (max) (HM51W16160 Series) 684 mW/612 mW/540 mW (max) (HM51W18160 Series)
- Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
• Fast page mode capability
• Refresh cycles
- 4096 refresh cycles : 64 ms (HM51W16160 Series)
: 128 ms (L-version)
- 1024 refresh cycles : 16 ms (HM51W18160 Series)
: 128 ms (L-version)
• 4 variations of refresh
- RAS-only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self refresh (L-version)
• 2CAS-byte control
• Battery backup operation (L-version)
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to VCC + 0.5 ( 4.6 V (max)) | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576- word × 16-bit. They employ the most advanced CMOS technology for high performance and low power.
The HM51W16160 Series, HM51W18160 Series offer Fast Page Mode as a high speed access mode. They have package variations of 42-pin plastic SOJ and 50-pin plastic TSOP II