Features: • Single 5 V (±10%) (HM51(S)4265C-6/7/8) (±5%) (HM51(S)4265C-6R)• High speed - Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation - Active mode: 825 mW/788 mW/770 mW/688 mW (max) - Standby mode: 11 mW (max) (HM51(S)4265C-6/7/8) 10.5 mW (max) (HM51(S)4265C-6R) 1...
HM51S4265C: Features: • Single 5 V (±10%) (HM51(S)4265C-6/7/8) (±5%) (HM51(S)4265C-6R)• High speed - Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation - Active mode: 825 mW/788 mW/77...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word ×16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4265C offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM51(S)4265C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables HM51S4265C self reflesh operation.