HM51S4260C

Features:

• Single 5 V (±10%) (HM51(S)4260C-6/7/8)
(±5%) (HM51(S)4260C-6R)
• High speed
- Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
- Active mode: 825 mW/788 mW/770 mW/688 mW (max)
- Standby mode: 11 mW (max) (HM51(S)4260C-6/7/8)
10.5 mW (max) (HM51(S)4260C-6R)
1.1 mW (max) (L-version) (HM51(S)4260C-6/7/8)
1.05 mW (max) (L-version) (HM51(S)4260C-6R)
• Fast page mode capability
• 512 refresh cycles: 8 ms 128 ms (L-version)
• 2 CAS -byte control
• 2 variations of refresh
- RAS -only refresh
- CAS -before-RAS refresh
• Battery backup operation (L-version)
• Self refresh operation (HM51S4260C)


Pinout




Specifications

Parameter	Symbol	Value	Unit
Voltage on any pin relative to VSS	VT	1.0 to +7.0	V
Supply voltage relative to VSS	VCC	1.0 to +7.0	V
Short circuit output current	Iout	50	mA
Power dissipation	PT	1.0	W
Operating temperature	Topr	0 to +70
Storage temperature	Tstg	55 to +125

Description

The Hitachi HM51S4260C is CMOS dynamic RAM organized as 262,144-word*16-bit. HM51(S)4260C has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260C offers fast page mode as a high speed access mode. Multiplexed address input permits the HM51(S)4260C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables HM51S4260C self refresh operation.