Features: • Single 5 V (±10%)• High speed - Access time: 70 ns/80 ns (max)• Low power dissipation - Active mode: 660 mW/578 mW (max) - Standby mode: 11 mW (max) 1.1 mW (max) (L-version)• Fast page mode capability• 1024 refresh cycles: 16 ms 128 ms (L-version)• 2...
HM51S4170C: Features: • Single 5 V (±10%)• High speed - Access time: 70 ns/80 ns (max)• Low power dissipation - Active mode: 660 mW/578 mW (max) - Standby mode: 11 mW (max) 1.1 mW (max) (L-ver...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM51(S)4170C are CMOS dynamic RAM organized as 262,144-word ×16-bit. HM51S4170C have realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4170C offer fast page mode as a high speed access mode. Multiplexed address input permits the HM51(S)4170C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables HM51S4170C self refresh operation.