Features: · Single 3.3 V (±0.3 V)· Access time: 50 ns/60 ns/70 ns (max)· Power dissipation-Active mode : TBD/450 mW/378 mW (max) (HM5164165A Series): TBD/648 mW/558 mW (max) (HM5165165A Series)-Standby mode : 7.2 mW (max): 0.72 mW (max) (L-version)· EDO page mode capability· Refresh cycles-RAS-onl...
HM5165165A: Features: · Single 3.3 V (±0.3 V)· Access time: 50 ns/60 ns/70 ns (max)· Power dissipation-Active mode : TBD/450 mW/378 mW (max) (HM5164165A Series): TBD/648 mW/558 mW (max) (HM5165165A Series)-Stan...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
· Single 3.3 V (±0.3 V)
· Access time: 50 ns/60 ns/70 ns (max)
· Power dissipation
- Active mode : TBD/450 mW/378 mW (max) (HM5164165A Series)
: TBD/648 mW/558 mW (max) (HM5165165A Series)
- Standby mode : 7.2 mW (max)
: 0.72 mW (max) (L-version)
· EDO page mode capability
· Refresh cycles
- RAS-only refresh 8192 cycles /64 ms (HM5164165A) 4096 cycles /64 ms (HM5165165A) /128 ms (HM5165165AL) (L-version)
- CBR/Hidden refresh 4096 cycles /64 ms (HM5164165A, HM5165165A) /128 ms (HM5165165AL) (L-version)
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VT | 0.5 to VCC + 0.5 ( 4.6 V (max)) | V |
Supply voltage relative to VSS | VCC | 0.5 to +4.6 | V |
Short circuit output current | Iout | 50 | mA |
Power dissipation | PT | 1.0 | W |
Operating temperature | Topr | 0 to +70 | |
Storage temperature | Tstg | 55 to +125 |
The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304- word ×16-bit. They employ the most advanced CMOS technology for high performance and low power.
HM5164165A Series, HM5165165A Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have the package variations of standart 400 mil 50-pin plastic SOJ and standerd 400 mil 50-pin plastic TSOPII