HM5164805F

Features:

· Single 3.3 V supply: 3.3 V ± 0.3 V
· Access time: 50 ns/60 ns (max)
· Power dissipation
     - Active: 414 mW/378 mW (max) (HM5164805F Series)
                 : 486 mW/414 mW (max) (HM5165805F Series)
     - Standby : 1.8 mW (max) (CMOS interface)
                     : 1.1 mW (max) (L-version)
· EDO page mode capability
· Refresh cycles
     - RAS-only refresh
     8192 cycles /64 ms (HM5164805F, HM5164805FL)
     4096 cycles /64 ms (HM5165805F, HM5165805FL)
     - CBR/Hidden refresh
     4096 cycles /64 ms (HM5164805F, HM5164805FL, HM5165805F, HM5165805FL)
·  4 variations of refresh
   - RAS-only refresh
   - CAS-before-RAS refresh
   - Hidden refresh
   - Self refresh (L-version)
·  Battery backup operation (L-version)


Specifications

Parameter	Symbol	Value	Unit
Terminal voltage on any pin relative to VSS	VT	0.5 to VCC + 0.5 ( 4.6 V (max))	V
Power supply voltage relative to VSS	VCC	0.5 to +4.6	V
Short circuit output current	Iout	50	mA
Power dissipation	PT	1.0	W
Storage temperature	Tstg	55 to +125

Description

The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word ´ 8-bit. They have realized high performance and low power by employing CMOS process technology. HM5164805F Series, HM5165805F Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have the package variation of standard 32-pin plastic SOJ and standard 32- pin plastic TSOPII.