HM5164165F

Features:

·  Single 3.3 V supply: 3.3 V ± 0.3 V
·  Access time: 50 ns/60 ns (max)
·  Power dissipation
      - Active: 432 mW/396 mW (max) (HM5164165F Series)
                  : 504 mW/432 mW (max) (HM5165165F Series)
      - Standby : 1.8 mW (max) (CMOS interface)
                      : 1.1 mW (max) (L-version)
·  EDO page mode capability
·  Refresh cycles
      - RAS-only refresh
        8192 cycles /64 ms (HM5164165F, HM5164165FL)
        4096 cycles /64 ms (HM5165165F, HM5165165FL)
      - CBR/Hidden refresh
        4096 cycles /64 ms (HM5164165F, HM5164165FL, HM5165165F, HM5165165FL)
·  4 variations of refresh
      - RAS-only refresh
      - CAS-before-RAS refresh
      - Hidden refresh
      - Self refresh (L-version)
·  2CAS-byte control
·  Battery backup operation (L-version)


Pinout




Specifications

Parameter	Symbol	Value	Unit
Terminal voltage on any pin relative to VSS	VT	0.5 to VCC + 0.5 ( 4.6 V (max))	V
Power supply voltage relative to VSS	VCC	0.5 to +4.6	V
Short circuit output current	Iout	50	mA
Power dissipation	PT	1.0	W
Storage temperature	Tstg	55 to +125

Description

The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304- word'16-bit. They have realized high performance and low power by employing CMOS process technology. HM5164165F Series, HM5165165F Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have the package variations of standard 50-pin plastic SOJ and standerd 50-pin plastic TSOPII