HM514400B

Features:

• Single 5 V (±10%)
• High speed
  - Access time 60 ns/70 ns/80 ns (max)
• Low power dissipation
  - Active mode 605 mW/550 mW/495 mW (max)
  - Standby mode 11 mW (max) 0.55 mW (max) (L-version)
• Fast page mode capability
• 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version)
• 3 variations of refresh
  -RAS-only refresh
  - CAS-before-RAS refresh
  - Hidden refresh
• Test function
• Battery back up operation
  - HM514400BL Series (L-version)
  - HM514400CL Series (L-version)


Pinout




Specifications

Parameter	Symbol	Value	Unit
Terminal voltage on any pin relative to VSS	VT	1.0 to +7.0	V
Power supply voltage relative to VSS	VCC	1.0 to +7.0	V
Short circuit output current	Iout	50	mA
Power dissipation	PT	1.0	W
Operating temperature	Topr	0 to +70
Storage temperature	Tstg	55 to +125

Description

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576- word ' 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/BL, HM514400C/CL offer Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM514400B/BL, HM514400C/CL to be packaged in standard 300-mil 26-pin plastic SOJ, standard 400-mil 20-pin plastic ZIP and 26-pin plastic TSOP II.