Features: ` Single 5 V (±5%) (HM51(S)4265D-5/6R) (±10%) (HM51(S)4265D-6/7/8)` Access time: 50 ns/60 ns/70 ns/80 ns (max)` Power dissipation - Active mode: 945 mW/945 mW/990 mW/825 mW/715 mW (max) - Standby mode: 10.5 mW (max) (HM51(S)4265D-5/6R) 11 mW (max) (HM51(S)4265D-6/7/8) 1.05 mW (max) (L-ve...
HM514265D: Features: ` Single 5 V (±5%) (HM51(S)4265D-5/6R) (±10%) (HM51(S)4265D-6/7/8)` Access time: 50 ns/60 ns/70 ns/80 ns (max)` Power dissipation - Active mode: 945 mW/945 mW/990 mW/825 mW/715 mW (max) - ...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM51(S)4265D Series is a CMOS dynamic RAM organized 262,144-word ×16-bit. HM51(S)4265D Series has realized higher density, higher erformance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4265D Series offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM51(S)4265D to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44- pin plastic TSOPII. Internal refresh timer enables HM51S4265D Series self reflesh operation.