Features: ` Single 5 V` Access time: 60 ns/70 ns/80 ns (max)` Power dissipation - Active mode: 825 mW/770 mW/688 mW (max) - Standby mode: 11 mW (max) 1.1 mW (max) (L-version)` Fast page mode capability 512 refresh cycles: 8 ms 128 ms (L-version)` 2 CAS byte control` 2 variations of refresh - RAS -...
HM514260D: Features: ` Single 5 V` Access time: 60 ns/70 ns/80 ns (max)` Power dissipation - Active mode: 825 mW/770 mW/688 mW (max) - Standby mode: 11 mW (max) 1.1 mW (max) (L-version)` Fast page mode capabil...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM51(S)4260D is CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4260D has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260D offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM51(S)4260D to be packaged in standard 400-mil 40-pin plastic SOJ, and standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables HM51S4260D self refresh operation.