Features: • Single 5 V (±10%)• High speed - Access time: 70 ns/80 ns (max)• Low power dissipation - Active mode: 660 mW/578 mW (max) - Standby mode: 11 mW (max) 1.1 mW (max) (L-version)• Fast page mode capability• 1024 refresh cycles: 16 ms 128 ms (L-version)• 2...
HM514170C: Features: • Single 5 V (±10%)• High speed - Access time: 70 ns/80 ns (max)• Low power dissipation - Active mode: 660 mW/578 mW (max) - Standby mode: 11 mW (max) 1.1 mW (max) (L-ver...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM51(S)4170C are CMOS dynamic RAM organized as 262,144-word ×16-bit. It has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. It offers fast page mode as a high speed access mode. Multiplexed address input permits the HM51(S)4170C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables HM51S4170C self refresh operation.