Features: ` Single 5 V (±10%)` High speed` Access time: 60 ns/70 ns (max)` Low power dissipation - Active mode: 715 mW/660 mW (max) - Standby mode: 11 mW (max)` EDO page mode capability` 1024 refresh cycles : 16 ms` 3 variations of refresh - RAS -only refresh - CAS -before- RAS refresh - Hidden re...
HM514105D: Features: ` Single 5 V (±10%)` High speed` Access time: 60 ns/70 ns (max)` Low power dissipation - Active mode: 715 mW/660 mW (max) - Standby mode: 11 mW (max)` EDO page mode capability` 1024 refres...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM514105D is a CMOS dynamic RAM organized 4,194,304 word ×1-bit. It has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. It offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM514105D to be packaged in standard 300-mil 26-pin plastic SOJ and standard 300-mil 26-pin plastic TSOP II.