Features: ` Single 5 V (±10%)` High speed - Access time : 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode : 605 mW/550 mW/495 mW (max) - Standby mode : 11 mW (max) 0.55 mW (max) (L-version)` Fast page mode capability` 1024 refresh cycles : 16 ms : 128 ms (L-version)` 3 variations of r...
HM514100C: Features: ` Single 5 V (±10%)` High speed - Access time : 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode : 605 mW/550 mW/495 mW (max) - Standby mode : 11 mW (max) 0.55 mW (max) (L-vers...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM514100C is a CMOS dynamic RAM organized 4,194,304 word×1-bit. It has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM514100C offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the product to be packaged in standard 300-mil 26-pin plastic SOJ, standard 400-mil 20-pin plastic ZIP and 26-pin plastic TSOP II.