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HM514100C

Features: ` Single 5 V (±10%)` High speed - Access time : 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode : 605 mW/550 mW/495 mW (max) - Standby mode : 11 mW (max) 0.55 mW (max) (L-version)` Fast page mode capability` 1024 refresh cycles : 16 ms : 128 ms (L-version)` 3 variations of r...

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SeekIC No. : 004363342 Detail

HM514100C: Features: ` Single 5 V (±10%)` High speed - Access time : 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode : 605 mW/550 mW/495 mW (max) - Standby mode : 11 mW (max) 0.55 mW (max) (L-vers...

HM514100C Data Sheet

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Part Number:
HM514100C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

`  Single 5 V (±10%)
`  High speed
     - Access time : 60 ns/70 ns/80 ns (max)
`  Low power dissipation
     - Active mode : 605 mW/550 mW/495 mW (max)
     - Standby mode : 11 mW (max)
         0.55 mW (max) (L-version)
`  Fast page mode capability
`  1024 refresh cycles : 16 ms
     : 128 ms (L-version)
`  3 variations of refresh
     - RAS -only refresh
     - CAS -before- RAS refresh
     - Hidden refresh
`  Test function
`  Battery backup operation (L-version)


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
1.0 to + 7.0
V
Supply voltage relative to VSS
VCC
1.0 to + 7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C



Description

The Hitachi HM514100C is a CMOS dynamic RAM organized 4,194,304 word×1-bit. It has realized higher density, higher performance and various functions by employing 0.8 mm CMOS process technology and some new CMOS circuit design technologies. The HM514100C offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the product  to be packaged in standard 300-mil 26-pin plastic SOJ, standard 400-mil 20-pin plastic ZIP and 26-pin plastic TSOP II.




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